Method of manufacturing semiconductor device

ABSTRACT

A method of manufacturing a semiconductor device is provided. The method includes placing a semiconductor chip by flip-chip mounting on a substrate by using an insulating resin adhesive film (NCF) and preventing overflow of the NCF and the intervention of an insulating resin or an inorganic filler between a bump and an electrode during hot pressing. The method also includes temporarily affixing an NCF of a size that is substantially 60 to 100% the area of a region enclosed with a plurality of bumps of the semiconductor chip arranged in a peripheral alignment, and having a minimum melt viscosity of 2×10 2  to 1×10 5  Pa·s, to the region enclosed with a plurality of electrodes of the substrate corresponding to the bumps, and aligning the semiconductor chip and the substrate with each other such that the bumps and the electrodes corresponding thereto are opposed to each other.

TECHNICAL FIELD

The present invention relates to a method of manufacturing asemiconductor device in which a semiconductor device is obtained byplacing a semiconductor chip provided with a plurality of bumps arrangedin a peripheral alignment by flip-chip mounting on a substrate via aninsulating resin adhesive film.

BACKGROUND ART

An anisotropic conductive adhesive film (ACF) containing conductiveparticles has widely been used to place a semiconductor chip byflip-chip mounting on a substrate to manufacture a semiconductor device.However, a trend toward finer interconnection pitch makes it difficultto maintain the connection reliability as a result of relationshipbetween the size of conductive particles and the interconnection pitch.

In response, a conventionally employed process is such that a gold studbump that can be shaped finely is provided on a semiconductor chip, andthe semiconductor chip is placed by flip-chip mounting on a substratevia an insulating resin adhesive film (Patent Literature 1). Thisflip-chip mounting via an insulating resin adhesive film generallyincludes the following. First, an insulating resin adhesive film of anarea slightly greater than an area substantially the same as the area ofa semiconductor chip is temporarily affixed to a substrate. Next, thesemiconductor chip and the interconnection substrate are aligned witheach other. Then, hot pressing is performed against the semiconductorchip, thereby mounting the semiconductor chip.

CITATION LIST Patent Literature

-   [Patent Literature 1] Japanese Patent Application Laid-Open No.    2008-203484

SUMMARY OF INVENTION Problem to be Solved by Invention

However, the flip-chip mounting disclosed in Patent Literature 1 makes amelted insulating resin adhesive film (NFC) 102 flow over the outer edgeof a semiconductor chip 101 provided with bumps 100, thereby causing theoverflowing resin to be attached to a hot press bonder 103 as shown inFIG. 5. This results in application of excessive pressure during hotpressing, failing to obtain a semiconductor device attaining an intendedquality. Further, failing to remove an insulating resin or an inorganicfiller completely from between electrodes 105 of a substrate 104 and thebumps 100 of the semiconductor chip 101 after the hot pressing resultsin unsatisfactory metallic bonding between the electrodes 105 and thebumps 100. Accordingly, the level of connection reliability is severelyreduced. Still further, the insulating resin adhesive film 102 exposedto the outside after moisture absorption and reflow causes curingfailure or lifting-off of the semiconductor chip 101. This also reducesthe level of connection reliability.

The present invention has been made to overcome the foregoing problemsin association with the background art. In a method of manufacturing asemiconductor device in which a semiconductor chip is placed byflip-chip mounting on a substrate by using an insulating resin adhesivefilm, it is an object of the invention to provide a manufacturing methodin which overflow of a melted insulating resin adhesive film, and theintervention of an insulating resin or an inorganic filler between abump and an electrode during hot pressing can be prevented, therebyproviding a semiconductor device having a sufficient moisture absorbedreflow resistance.

Means for Solving Problem

The present inventors found that the above-described object is achievedby setting the area of an insulating resin adhesive film with respect tothe area of a region enclosed with a plurality of bumps of asemiconductor chip arranged in a peripheral alignment, and the minimummelt viscosity of the insulating resin adhesive film to fall withintheir respective specific ranges. Thus, the inventors attained theinvention.

More specifically, the present invention provides a method ofmanufacturing a semiconductor device, includes placing a semiconductorchip provided with a plurality of bumps arranged in a peripheralalignment by flip-chip mounting on a substrate provided with a pluralityof electrodes corresponding to the bumps via an insulating resinadhesive film.

The method is characterized by temporarily affixing an insulating resinadhesive film of a size that is substantially 60 to 100%, an area of aregion enclosed, with the plurality of bumps of the semiconductor chiparranged in a peripheral alignment, and having a minimum melt viscosityof 2×10² to 1×10⁵ Pa·s, to a region enclosed with the plurality ofelectrodes of the substrate corresponding to the bumps; aligning thesemiconductor chip and the substrate with each other such that the bumpsand the electrodes corresponding thereto are opposed to each other;performing hot pressing against the semiconductor chip to establishmetallic contact between the bumps and the electrodes; and melting theinsulating resin adhesive film to further heat curing the film.

Advantageous Effects of Invention

In the method of manufacturing a semiconductor device of the presentinvention, an insulating resin adhesive film of a size that is at leastsubstantially 60 to 100% the area of a region enclosed with theplurality of bumps of a semiconductor chip arranged in a peripheralalignment, and having a minimum melt viscosity of 2×10² to 1×10⁵ Pa·s,is temporarily affixed to the region enclosed with the plurality ofelectrodes of the substrate corresponding to the plurality of bumps ofthe semiconductor chip. Accordingly, the insulating resin adhesive filmis not present between the bumps of the semiconductor chip and theelectrode pads of the substrate corresponding thereto immediately afterthe semiconductor chip is hot pressed against the substrate.Furthermore, the melted insulating resin adhesive film is prevented fromflowing over to the outside of the semiconductor chip. Still further, itbecomes possible to perform hot pressing at a relatively low pressure.Accordingly, sufficient metallic contact is established between each ofthe bumps and the corresponding connection pad, while attachment of amelted resin to a hot press bonder is prevented. As already described,junctions between the bumps of the semiconductor chip and the electrodesof the substrate are sealed after hot pressing without causing overflowof a resin, thereby enhancing a resistance to moisture absorption andreflow. As a result, a semiconductor device having high level ofconnection reliability is provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a cross-sectional view of a semiconductor chips provided withbumps.

FIG. 1B is a plan view of the semiconductor chip as seen from the bumps.

FIG. 2 is a cross-sectional view of a substrate provided withelectrodes.

FIG. 3A is a cross-sectional view of the substrate to which aninsulating resin adhesive film is temporarily affixed.

FIG. 3B is a plan view as seen from the insulating resin adhesive film,showing the substrate to which the insulating resin adhesive film istemporarily affixed.

FIG. 4A is a view explaining a state immediately after the semiconductorchip is hot pressed by a hot press bonder against the substrate.

FIG. 4B is a view explaining a state after the semiconductor chip is hotpressed to a significant extent by the hot press bonder against thesubstrate.

FIG. 5 is a view explaining flip-chip mounting of the background art.

MODES FOR CARRYING OUT THE INVENTION

A method of manufacturing a semiconductor device according to thepresent invention will now be described with reference to drawings.

(1) First, a semiconductor chip 2 provided with bumps 1 (FIG. 1A), asubstrate 12 provided with electrodes 11 (FIG. 2), and an insulatingresin adhesive film (NCF) are prepared.

The bumps 1 are arranged on the semiconductor chip 2 in a peripheralalignment, namely arranged in a line of bumps near the outer peripheryof the semiconductor chip 2 (FIG. 1B). While shown to be arranged in aline of bumps in FIG. 1B, the bumps 1 may be arranged in two or morelines of bumps.

There are no particular limitations imposed on the semiconductor chip 2and the bumps 1. However, gold stud bumps that are highly responsive toa trend toward finer pitch are preferably used as the bumps 1. Regardingthe dimension of such gold stud bumps, the height is preferably 35 to100 μm, more preferably, 35 to 70 μm, and particularly preferably, 35 to45 μm. The base diameter is preferably 10 to 50 μm, more preferably, 10to 40 μm, and particularly preferably, 10 to 20 μm. The pitch betweenthe bumps is preferably 50 to 200 μm, and more preferably, 50 to 70 μm.

In order to prevent overflow of a melting insulating resin, a distancebetween the outer periphery of the semiconductor chip 2 and the bumps 1is preferably set to 0.07 to 0.2 mm, and more preferably, 0.1 to 0.15mm.

The electrodes 11 are arranged on the substrate 12 such that they are inpositions corresponding to those of the bumps 1 (arranged in a line ofbumps) of the semiconductor chip 2 to which the electrodes 11 are to beconnected. The insulating resin adhesive film (NCF) is temporarilyaffixed to a region enclosed with the plurality of electrodes.

There are no particular limitations imposed on the substrate 12 and theelectrodes 11. Examples of the substrate 12 include a rigid substrate, aflexible substrate, and a rigid-flexible substrate. Examples of theelectrodes 11 include those made by forming copper foil into lands, andapplying Ni/Au plating to the surfaces of the lands.

A publicly known insulating resin adhesive film used to mount asemiconductor chip on a substrate is employed as the insulating resinadhesive film (NCF). Examples of the insulating resin adhesive filminclude those made by forming a curable epoxy resin composition or acurable acrylic resin composition into a film. In preferred examples,these may be of the thermosetting type.

The thermosetting epoxy resin composition can be composed of, forexample, a compound or a resin having two or more epoxy groups in amolecule, an epoxy curing agent, film forming component, and the like.

The compound or resin having two or more epoxy groups in a molecule mayeither be in a solid state or of a liquid state. Examples of thecompound or resin include bifunctional epoxy resins such as bisphenol Aepoxy resins and bisphenol F epoxy resins, novolak epoxy resins such asphenol novolak epoxy resins and cresol novolak epoxy resins, andalicyclic epoxy compounds such as3,4-epoxycyclohexenylmethyl-3′,4′-epoxycyclohexene carboxylate.

Examples of the epoxy curing agent include amine curing agents, imidazolcuring agents, acid anhydride curing agents, and sulfonium cation curingagents. The curing agent may be latent.

Examples of the film forming component include phenoxy resins andacrylic resins compatible with epoxy compounds and epoxy resins.

The thermosetting epoxy resin composition may contain, if necessary,publicly known curing accelerators, silane coupling agents, metalscavengers, stress relieving agents such as butadiene rubbers, inorganicfillers such as silica, polyisocyanate cross-linking agents, colorants,antiseptic agents, solvents, and the like.

The thermosetting acrylic resin composition can be composed of, forexample, a (meta)acrylate monomer, a film forming resin, an inorganicfiller such as silica, a silane coupling agent, a radical polymerizationinitiator, and the like.

Examples of the (meta)acrylate monomers include monofunctional(meta)acrylate monomers and polyfunctional (meta)acrylate monomers, ordenatured monofunctional or polyfunctional (meta)acrylate monomersformed by introducing an epoxy group, a urethane group, an amino group,an ethylene oxide group, a propylene oxide group or the like to themonofunctional (meta)acrylate monomer or polyfunctional (meta)acrylatemonomer. Other monomers such as (meta)acrylic acids, vinyl acetate,styrene and vinyl chloride that can be radically copolymerized with the(meta)acrylate monomers may be used in combination, as long as they donot impair the effect of the present invention.

Examples of the film forming resin for the thermosetting acrylic resincomposition include phenoxy resins, polyvinyl acetal resins, polyvinylbutyral resins, alkylated cellulose resins, polyester resins, acrylicresins, styrene resins, urethane resins, and polyethylene terephthalateresins.

Examples of the radical polymerization initiator include organicperoxides such as benzoyl peroxides, dicumyl peroxides and dibutylperoxides, and azobis compounds such as azobisisobutyronitrile andazobis-valeronitrile.

The thermosetting acrylic resin composition may contain, if necessary,stress relieving agents such as butadiene rubbers, solvents such asethyl acetate, colorants, antiseptic agents, and age resisters.

The thermosetting epoxy resin composition or the thermosetting acrylicresin composition can be shaped into the insulating resin adhesive film(NCF) by employing a publicly known process.

The insulating resin adhesive film (NCF) described so far used in thepresent invention should have a minimum melt viscosity that ispreferably set to 2×10² to 1×10⁵ Pa·s, more preferably, 5×10² to 5×10⁴Pa·s. When the viscosity thereof falls below these ranges, theprobability of the resin overflow increases. When the viscosity exceedsthese ranges, the probability of failing to seal junctions between bumpsand electrodes increases.

The too small a thickness of the insulating resin adhesive film (NCF)results in reduction in its headleability, and the insulating resinadhesive film with such small thickness becomes unable to function as anunderfill. In contrast, the too great a thickness of the insulatingresin adhesive film generates the overflow during hot pressing.Accordingly, the thickness of the insulating resin adhesive film ispreferably 30 to 70 μm, more preferably, 35 to 50 μm.

(2) Next, the insulating resin adhesive film (NCF) having a minimum meltviscosity of 2×10² to 1×10⁵ Pa·s is temporarily affixed to the substrate12 (FIG. 3A). The position for temporary affixation corresponds to aposition inside a region R enclosed with the plurality of bumps 1 of thesemiconductor chip 2 arranged in a peripheral alignment (FIG. 3B).

The insulating resin adhesive film (NCF) is of a size equal to 60 to100%, and more preferably 70 to 90%, the area of the region R enclosedwith the bumps 1 of the semiconductor chip 2 arranged in a peripheralalignment. The size less than 60% increases the probability of failingto seal a junction between a bump of a semiconductor chip and anelectrode of a substrate. The size greater than 100% results in a fearthat an insulating resin or an inorganic filler may not be removedcompletely between the bump and the electrode, while resulting infailure to alleviate a condition for hot pressing.

The condition for temporary affixation is preferably such that aninsulating resin adhesive film will not substantially be cured. Morespecifically, examples of the condition include temperatures of 60 to70° C., pressures of 0.25 to 1.0 MPa, and duration of 1 to 3 seconds.

(3) Next, the semiconductor chip 2 and the substrate 12 are aligned witheach other such that the bumps 1 and the electrodes 11 correspondingthereto are opposed to each other. Then, hot pressing is performedagainst the semiconductor chip 2 by a hot press bonder 30 (FIG. 4A). Inthis case, with regard, first, to the bumps 1 and the electrodes 11,they become in direct contact with each other without holding theinsulating resin adhesive film therebetween, thereby establishingmetallic contact therebetween. With regard to the insulating resinadhesive film, it is melted, and is then hot cured. As a result,semiconductor device is completed. During the hot pressing, the meltedinsulating resin adhesive film spreads toward the outer edge of thesemiconductor chip 2, and is then cured. The periphery of the curedinsulating resin adhesive film may be defined only in the regionenclosed with the plurality of bumps 1 arranged in a peripheralalignment. However, it is preferable that this periphery also be definedbetween the plurality of bumps 1 arranged in a peripheral alignment andthe outer edge of the semiconductor chip 2 as shown in FIG. 4B, as thiswill seal junctions between the bumps 1 and the electrodes 11.

Hot press bonders conventionally employed in flip-chip mounting may beused as the hot press bonder 30.

Examples of a condition for hot pressing using the hot press bonder 30include hot press temperatures that are preferably 120 to 270° C., andmore preferably 170 to 200° C., and pressures that are preferably 0.5 to2.5 MPa, and more preferably 2.0 to 2.5 MPa. The configuration of thepresent invention especially advantageously reduces pressures during hotpressing to about one-third to one-fifth the conventional pressure thatis 10 kg/IC.

The semiconductor device obtained by following the above-describedmanufacturing method of the present invention has a moisture absorbedreflow resistance, and excellent connection reliability.

EXAMPLES

Examples are given below to more specifically describe the presentinvention. In Examples given below, minimum melt viscosities of NCFcompositions were measured by using a cone-plate viscometer.

Examples of Manufactures 1 to 5 of Insulating Resin Adhesive Film (NCF)

Ingredients shown in Table 1 were uniformly mixed, and toluene was addedto resultant mixtures such that the solid content concentrations thereofare 60% by mass. As a result, NCF compositions were obtained. Theresultant compositions were applied by using a bar coater onto releasefilms (manufactured by Sony Chemical & Information Device Corporation),and were dried in an oven at a temperature of 80° C. As a result,insulating resin adhesive films (NCFs) 1 to 5 with a thickness of 50 μmwere obtained. The minimum melt viscosities (Pa·s) of the NCFs therebyobtained were measured at a rate of temperature increase of 10° C./minby using the cone-plate viscometer. The measured result is shown inTable 1. Insulating resin adhesive films applicable to the presentinvention are the NCFs 2 to 4 in terms of minimum melt viscosity.

TABLE 1 Ingredient (part by Product mass) Name NCF 1 NCF 2 NCF 3 NCF 4NCF 5 Film- YP50 *1 — — — 15 15 forming compo- nent Solid YD020 *2 30 1515 — — epoxy Liquid JER828 *3 10 10 10 10 10 epoxy Rubber XER-91 *4  5 5  5  5  5 compo- nent Curing 3941HP *5  5 20 20 20 20 agent SilicaSO-E2 *6 — 50 46 46 42 particle RY200 *7 — —  4  4  8 Silane A-187 *8 1phr 1 phr 1 phr 1 phr 1 phr coupling agent Minimum 1 × 10¹ 2 × 10² 8 ×10³ 1 × 10⁵ 4 × 10⁷ melt viscosity [Pa · s] Notes *1: Phenoxy resin,manufactured by Tohto Kasei Co., Ltd. *2: manufactured by Tohto KaseiCo., Ltd. *3: manufactured by Japan Epoxy Resins Co., Ltd. *4:Acrylonitol-butadiene rubber particles, manufactured by Japan SyntheticRubber Co., Ltd. *5: Imidazol latent curing agent, manufactured by AsahiKasei Chemicals Corporation *6: manufactured by Shin-Etsu QuartzProducts Co., Ltd. *7: manufactured by NIPPON AEROSIL CO., LTD. *8:manufactured by Momentive Performance Materials Inc.

Examples 1 to 7 and Comparative Examples 1 to 6

The NCFs 1 to 5 cut into NCF area ratios shown in Table 2 weretemporarily affixed (at a temperature of 60° C., a pressure of 0.5 MPa,and with a duration of heating and pressurization of 3 seconds) by a hotpress bonder (available from Sony Chemical & Information DeviceCorporation) to a region enclosed with electrodes (formed by applyingnickel-gold plating to copper) of a substrate (MCL-E-679F, availablefrom Hitachi Chemical Co., Ltd.). The electrodes of the substratecorrespond to a plurality of Au stud bumps (with a height of 75 to 85μm) arranged in a peripheral alignment (in a pitch of 150 μm) providedto an LSI chip (6.3 mm per side and with a thickness of 0.1 mm; anaverage distance between the bumps and the periphery of the LSI chip is0.1 μm). The NCF area ratio is a ratio of the area of a cut-out NCF tothe area of the region enclosed with the plurality of bumps.

(Presence or Absence of Resin Attached to Bonder)

The surface of the LSI chip provided with the bumps was placed to beopposed to the surface of the substrate to which the NCF was temporarilyaffixed. Then, after alignment, hot pressing was performed (permanentthermocompression bonding; at a temperature of 180° C., a pressure of2.5 MPa, and with a duration of heating and pressurization of 20seconds) by using a hot press bonder that is 8 mm per side (availablefrom Sony Chemical & Information Device Corporation). As a result, asemiconductor device was obtained. Regarding the semiconductor devicethereby obtained, the presence or absence of a resin attached to the hotpress bonder was visually examined. The result of examination is shownin Table 2.

(Moisture Absorbed Reflow Resistance)

The semiconductor devices was left to stand at a temperature of 85° C.and a humidity of 85% for 168 hours, and thereafter, was immersed in asolder reflow furnace the maximum temperature of which is 265° C.Thereafter, a conductive resistance value was measured. A conductiveresistance value of less than 0.13Ω was rated as A. A conductiveresistance value of not less than 0.13Ω and not greater than 1.0Ω wasrated as B. A conductive resistance value of greater than 1Ω was ratedas C. The result thereby obtained is shown in Table 2.

(Initial Conductive Resistance and Conductive Resistance after PCT)

An initial conduction resistance and a conduction resistance after PCTtest (standing at a temperature of 121° C. and a humidity of 100% for120 hours) were also measured. The measured result (a maximum valueamong a plurality of measured results) is shown in Table 2. A conductiveresistance of not less than 1Ω was rated as “open.” A conductiveresistance is desirably not greater than 0.3Ω from a practicalviewpoint.

TABLE 2 Example 1 2 3 4 5 6 7 NCF No. NCF 3 NCF 3 NCF 3 NCF 4 NCF 4 NCF2 NCF 2 NCF area ratio 70 80 90 70 90 70 90 (%) NCF minimum melt 8 × 10³8 × 10³ 8 × 10³ 1 × 10⁵ 1 × 10⁵ 2 × 10² 2 × 10² viscosity (Pa · s)Presence or Absence Absence Absence Absence Absence Absence Absenceabsence of resin attached to bonder Moisture A A A B B B B absorbedreflow resistance Initial 0.107 0.109 0.104 0.105 0.109 0.108 0.11conductive resistance (Ω) Conductive 0.109 0.112 0.107 0.13 0.135 0.1360.133 resistance (Ω) after PCT Comparative Example 1 2 3 4 5 6 NCF No.NCF 1 NCF 5 NCF 3 NCF 3 NCF 1 NCF 5 NCF area ratio 70 90 50 120 80 80(%) NCF minimum melt 1 × 10¹ 4 × 10⁷ 8 × 10³ 8 × 10³ 1 × 10¹ 4 × 10⁷viscosity (Pa · s) Presence or Presence Absence Absence PresencePresence Absence absence of resin attached to bonder Moisture C C C C CC absorbed reflow resistance Initial 0.107 0.191 open open 0.104 0.156conductive resistance (Ω) Conductive open open open open open openresistance (Ω) after PCT

As seen from Table 2, the semiconductor substrates of Examples 1 to 7each having an NCF area ratio corresponding to a size of 60 to 100%, anda minimum melt viscosity of 2×10² to 1×10⁵ Pa·s, prevented overflow of amelting insulating resin during hot pressing, and realized high level ofconnection reliability as a result of their low conductive resistancesboth in an initial stage and in a stage after the PCT test. Inparticular, it was found that Examples 1 to 3 each resulted in littledifference between a conductive resistance after the PCT test and aninitial conductive resistance, and thus has an excellent moistureabsorbed reflow resistance.

In contrast, attachment of a resin to a bonder was observed in the caseof each of Comparative Examples 1 and 5 due to too low an NCF minimummelt viscosity, and in the case of Comparative Example 4 due to too highan NCF area ratio. In each of these cases, the moisture absorbed reflowresistance was rated as “C,” and the conductive resistance after the PCTwas rated as “open.” In addition to these ratings, the initialconductive resistance was rated as “open” in the case of ComparativeExample 4. In the case of each of Comparative Examples 2 and 6, themoisture absorbed reflow resistance was rated as “C,” and the conductiveresistance after the PCT was rated as “open” due to too high an NCFminimum melt viscosity. In the case of Comparative Example 3, themoisture absorbed reflow resistance was rated as “C,” and the conductiveresistances both in the initial stage and in the stage after the PCTwere rated as “open” due to too low an NCF area ratio.

(Evaluation of Low-Pressure Bonding Properties)

Measurement was repeatedly conducted under the same condition as thatdefined for each of Examples 1 and 2, with the exception that a pressureduring hot pressing was set to 0.5 MPa. As a result, no attachment of aresin to the bonder was observed, and a conductive resistance after thePCT test did not change. Accordingly, it was found that themanufacturing method of the present invention is suitable forlow-pressure bonding.

INDUSTRIAL APPLICABILITY

The method of manufacturing a semiconductor device according to thepresent invention prevents overflow of an NCF, and prevents theintervention of an insulating resin or an inorganic filler between abump and an electrode pad during hot pressing. Accordingly, asemiconductor device provided by the method has a sufficient resistanceto moisture absorption and reflow.

DESCRIPTION OF REFERENCE NUMERALS

-   1, 100 bump-   2, 101 semiconductor chip-   11, 105 electrode-   12, 104 substrate-   30, 103 hot press bonder-   NCF, 102 insulating resin adhesive film-   R area

The invention claimed is:
 1. A method of manufacturing a semiconductordevice, including placing a semiconductor chip provided with a pluralityof bumps arranged in a peripheral alignment by flip-chip mounting on asubstrate provided with a plurality of electrodes corresponding to thebumps via an insulating resin adhesive film, the method beingcharacterized by temporarily affixing an insulating resin adhesive filmhaving a minimum melt viscosity of 8×10³ to 1×10⁵ Pa·s, to the substrateso as to cover 70 to 90% the area of the region enclosed with theplurality of bumps of the semiconductor chip arranged in the peripheralalignment; aligning the semiconductor chip and the substrate with eachother such that the bumps and the electrodes corresponding thereto areopposed to each other; and performing hot pressing against thesemiconductor chip to establish metallic contact between the bumps andthe electrodes, to melt the insulating resin adhesive film so that themelted insulating resin does not flow over to the outside of thesemiconductor chip, and to heat cure the film; wherein: duringperforming hot pressing, the melted insulating resin adhesive filmspreads toward an outer edge of the semiconductor chip, and is cured, toobtain a semiconductor where a periphery of the cured insulating resinadhesive film is defined between the plurality of bumps arranged in theperipheral alignment and the outer edge of the semiconductor chip,exclusive.
 2. The manufacturing method according to claim 1, wherein theinsulating resin adhesive film contains a curable epoxy resincomposition or a curable acrylic resin composition.
 3. The manufacturingmethod according to claim 1, wherein the hot pressing is performed at atemperature of 170 to 200° C. and at a pressure of 2.0 to 2.5 MPa. 4.The manufacturing method according to claim 1, wherein the hot pressingis performed at a pressure of 2.0 to 3.33 kg/IC.
 5. The manufacturingmethod according to claim 2, wherein the insulating resin adhesive filmcontains a curable acrylic resin composition.
 6. The manufacturingmethod according to claim 1, wherein the hot pressing is performed at atemperature of 170 to 200° C.
 7. The manufacturing method according toclaim 1, wherein the hot pressing is performed at a pressure of 2.0 to2.5 MPa.
 8. The manufacturing method according to claim 1, wherein theplurality of bumps of the semiconductor chip are gold stud bumps of aheight of 35 to 100 μm.
 9. The manufacturing method according to claim8, wherein the insulating resin adhesive film has a thickness of 30 to70 μm.